Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/37203
Title: Fabrication of a Few-Layer Graphene Electrodes for Molecular Electronics Devices
Authors: Holovchenko, A.I.
Koole, M.
Burzuri, E.
Zant, van der H.S.J.
Keywords: Nanoscale devices
Three-terminal transistors
Graphene electrodes
Electroburning
Issue Year: 2014
Publisher: Sumy State University
Citation: Proc. NAP 3, 02NNPT05 (2014)
Abstract: We report on thefabrication of a molecular transistor based on a single molecule trapped in a few-layergraphene nanogap. The device is pre-patterned with He-ion beam milling oroxygen plasma etching prior to nanogap formation. Pre-patterning helps tolocalize the gap, and to make it narrower, so that only a few or a singlemolecule can be trapped in it. The nanogap is formed by an electroburning techniqueat room temperature. In order to test the functionality of the device wedeposited diamino-terphenyl molecules in the nanogap. Three-terminal electricalmeasurements showed an increase of the current after deposition, and a gatevoltage dependence at low temperatures. Hence, pre-patterned few-layer graphenejunctions can be used for electron transport measurements through a terphenylmolecule with a future prospective towards more complex molecularconfigurations.
URI: http://essuir.sumdu.edu.ua/handle/123456789/37203
Type: Article
Appears in Collections:Наукові видання (ЕлІТ)

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