Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/37231
Title: Recombination Losses in Solar Cells Based on n-ZnS(n-CdS) / p-CdTe Heterojunctions
Authors: Opanasiuk, Anatolii Serhiiovych 
Nefedchenko, Vasyl Fedorovych
Dobrozhan, O.А.
Keywords: Solar cells
Recombination losses
Efficiency
ZnS / CdTe
CdS / CdTe
Issue Year: 2014
Publisher: Sumy State University
Citation: Proc. NAP 3, 02NEA06 (2014)
Abstract: The recombination losses in ancillary and absorber layers of solar cells based on n-ZnS / p-CdTe and n-CdS / p-CdTe heterojunctions with ITO and ZnO current-collecting frontal contacts were calculated. The effect of recombination losses in solar cells with structure ITO(ZnO) / CdS(ZnS) / CdTe on the short-circuit current (Jsc) and the efficiency (η) of photovoltaic devices at different window layer thickness CdS (ZnS) (50-300 nm) and at invariable of current-collecting layer thickness (200 nm) were investigated. The influence of recombination velocity (S = 107-109 cm/s) on the main features of solar cells was researched. It was established that solar cells with structure ZnO/ZnS/CdTe at the concentration of uncompensated acceptors in absorber layer (Na – Nd) = 1015-1017 cm-3 and at window layer thickness 50 nm at recombination velocity S = 107 cm/s have the highest efficiency values (15.9-16.1 %).
URI: http://essuir.sumdu.edu.ua/handle/123456789/37231
Type: Article
Appears in Collections:Наукові видання (ЕлІТ)

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