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Title | Single crystal aluminum deposit formation on isotropic substrates by means of self-organized ion sputtering |
Authors |
Perekrestov, Viacheslav Ivanovych
Korniushchenko, Hanna Serhiivna ![]() Kosminska, Yuliia Oleksandrivna ![]() |
ORCID |
http://orcid.org/0000-0002-2996-1003 http://orcid.org/0000-0002-2175-9206 |
Keywords |
self-organized formation isotropic substrate |
Type | Article |
Date of Issue | 2006 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/4077 |
Publisher | Technical Physics Letters |
License | |
Citation | Perekrestov, V.I. Single crystal aluminum deposit formation on isotropic substrates by means of self-organized ion sputtering [Текст] / V.I. Perekrestov, H.S. Korniushchenko, Y.O. Kosminska // Technical Physics Letters. — 2006. — vol. 32. — No. 10. — pp. 868-870 |
Abstract |
A substantially new technological approach is considered, which is based on the self-organized formation of aluminum single crystal layer on isotropic substrates in the course of stationary condensation of reverse diffusion fluxes in a planar dc magnetron. The functional possibilities of self-organized ion sputtering systems are discussed.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/4077 |
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Single crystal aluminum deposit formation on isotropic substrates by means of self-organized ion sputtering.pdf | 66,43 kB | Adobe PDF | 1814712725 |
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