Showing results 1 to 4 of 4
| Issue Year | Title | Author(s) | Type | Views | Downloads |
|---|---|---|---|---|---|
| 2022 | An Analytical Model for the Depletion Region Width and Threshold Voltage of a Parallel Gated Junctionless Field Effect Transistor | Raibaruah, A.K.; Sarma, K.C.D. | Article | 74147307 | 92882052 |
| 2021 | Effect of ZrO2 Dielectric over the DC Characteristics and Leakage Suppression in AlGaN/InGaN/GaN DH MOS-HEMT | Sandeep, V.; Charles Pravin, J. | Article | -253900873 | 1931379069 |
| 2020 | Numerical Simulation of FinFET Transistors Parameters | Buryk, І.P.; Golovnia, A.O.; Ivashchenko, M.M.; Odnodvorets, Larysa Valentynivna | Article | -67207563 | 1379770529 |
| 2009 | Влияние типа аниона электролита на морфологию пористого InP, полученого методом электролитического травления | Сычикова, Я.А.; Кидалов, В.В.; Сукач, Г.А. | Article | -2069843006 | -2061847469 |