Показаны результаты 1 - 3 из 3
Год выпуска | Название | Автор(ы) | Тип | Просмотров | Загружено |
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2020 | Effect of Top Electrode Materials on Switching Characteristics and Endurance Properties of Zinc Oxide Based RRAM Device | Gupta, Chandra Prakash; Jain, Praveen K.; Chand, Umesh; Sharma, Shashi Kant; Birla, Shilpi; Sancheti, Sandeep | Article | -642848956 | 603543314 |
2016 | Investigating the Temperature Effects on ZnO, TiO2, WO3 and HfO2 Based Resistive Random Access Memory (RRAM) Devices | Dongale, T.D .; Khot, K.V.; Mohite, S.V.; Khandagale, S.S.; Shinde, S.S.; Patil, V.L.; Vanalkar, S.A.; Moholkar, A.V.; Rajpure, K.Y.; Bhosale, P.N.; Patil, P.S.; Gaikwad, P.K.; Kamat, R.K. | Article | 1109876380 | -2005125090 |
2017 | Resistive Switching Properties of Highly Transparent SnO[2]:Fe | Trivedi, S.J.; Joshi, U.S. | Article | -1778551672 | -621316362 |