Видання зареєстровані авторами шляхом самоархівування
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Item Плівки напівпровідників та металів, одержані методом тривимірного друку, для пристроїв електроніки(Національна академія наук України; Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України; Рада молодих вчених Інституту фізики напівпровідників імені В.Є. Лашкарьова НАН України, 2019) Знаменщиков, Ярослав Володимирович; Знаменщиков, Ярослав Владимирович; Znamenshchykov, Yaroslav Volodymyrovych; Шкиря, Ю.І.; Колесник, Максим Миколайович; Колесник, Максим Николаевич; Kolesnyk, Maksym Mykolaiovych; Пшеничний, Роман Миколайович; Пшеничный, Роман Николаевич; Pshenychnyi, Roman Mykolaiovych; Опанасюк, Анатолій Сергійович; Опанасюк, Анатолий Сергеевич; Opanasiuk, Anatolii SerhiiovychВ роботі досліджені властивості плівок, нанесених 3D друком чорнилами на основі наночастинок металевих (Ag) та напівпровідникових (ZnO, Cu2ZnSnS4) сполук. Такі напівпровідникові плівки можуть бути використані у якості чутливих шарів приладів сенсорики, оптоелектроніки, геліоенергетики, а металічні шари, як струмопровідні доріжки.Item Quality improvement of CZTS thin films deposited by spray pyrolysis method using pulsed Nd: YAG laser irradiation(Elsevier, 2019) Шамардін, Артем Володимирович; Шамардин, Артем Владимирович; Shamardin, Artem Volodymyrovych; Курбатов, Денис Ігорович; Курбатов, Денис Игоревич; Kurbatov, Denys Ihorovych; Grace, O.; Kaupuzs, J.; Medvids, A.; Vecstaudza, J.In this work, thin films of Cu2ZnSnS4 (CZTS) were grown by spray-pyrolysis method and were irradiated by pulsed Nd: YAG laser. Their morphological, chemical, structural and substructural characteristics were investigated using AFM, SEM, EDS, XRD and Raman spectroscopy. Upon laser irradiation, improvement of crystallinity, stoichiometry and surface morphology were observed in the obtained CZTS thin films with the normal distribution of newly-formed particles throughout the plane. It was shown that the laser processing by pulsed Nd: YAG laser is an alternative method to the traditional post-growth thermal annealing and can be used not only for local annealing but also for annealing in various depths in the films.Item The Study of the Optical Properties of CdTe Thin Films Doped with Ytterbium(2017) Буківський, Петро Миколайович; Букивский, Петр Николаевич; Bukivskyi, Petro Mykolaiovych; Гнатенко, Юрій Павлович; Гнатенко, Юрий Павлович; Hnatenko, Yurii Pavlovych; Опанасюк, Анатолій Сергійович; Опанасюк, Анатолий Сергеевич; Opanasiuk, Anatolii Serhiiovych; Колесник, Максим Миколайович; Колесник, Максим Николаевич; Kolesnyk, Maksym Mykolaiovych; Fur’yer, M.S; Bukivskii, A.P.Item Determination of fundamental optical constant of Zn2SnO4 films(V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 2017) Салогуб, Анна Олександрівна; Салогуб, Анна Александровна; Salohub, Anna Oleksandrivna; Возний, Андрій Андрійович; Возный, Андрей Андреевич; Voznyi, Andrii Andriiovych; Климов, Олексій Володимирович; Климов, Алексей Владимирович; Klymov, Oleksii Volodymyrovych; Safryuk, N.V.; Курбатов, Денис Ігорович; Курбатов, Денис Игоревич; Kurbatov, Denys Ihorovych; Опанасюк, Анатолій Сергійович; Опанасюк, Анатолий Сергеевич; Opanasiuk, Anatolii SerhiiovychExamined in this paper have been optical properties of polycrystalline films Zn2SnO4 deposited using the spray pyrolysis method within the range of substrate temperatures 250 °C to 450 °C in increments of 50 °C. The spectral dependences have been found for the following physical quantities: k(λ), n(λ), ε1(λ), ε2(λ) and defined as they change under the influence of substrate temperature Тs. Moreover, using the model by Wemple–DiDomenico it was calculated the dispersion energy Ео and Ed for this oxide. Two independent methods defined band gaps Zn2SnO4, which decreases from 4.21…4.22 eV down to 4.04…4.05 eV with increasing Тs from 250 °C up to 450 °C.Item Photovoltaic Effect of SnS/CdS Heterostructure(2017) Єрьоменко, Юрій Сергійович; Еременко, Юрий Сергеевич; Yeromenko, Yurii Serhiiovych; Возний, Андрій Андрійович; Возный, Андрей Андреевич; Voznyi, Andrii Andriiovych; Косяк, Володимир Володимирович; Косяк, Владимир Владимирович; Kosiak, Volodymyr Volodymyrovych; Шпетний, Ігор Олександрович; Шпетный, Игорь Александрович; Shpetnyi, Ihor Oleksandrovych; Колесник, Максим Миколайович; Колесник, Максим Николаевич; Kolesnyk, Maksym Mykolaiovych; Опанасюк, Анатолій Сергійович; Опанасюк, Анатолий Сергеевич; Opanasiuk, Anatolii SerhiiovychTin sulphide is a promising absorber material for low-cost and earth abundant thin film solar cells. In this regard, we have studied phase composition, structural, and electrical properties of n-CdS/p-SnS heterostructure obtained by the close spaced vacuum sublimation (CSS) method. Surface and cross- sectional morphology of the structure were studied by using of field emission scanning electron microscope (FESEM). Thickness of the layers (450 nm for SnS and 550 nm for CdS) and growth mechanism were determined directly from heterostructure cross- section. Crystal structure and films purity were studied by X-ray diffraction (XRD) and Raman spectroscopy methods. The light current density-voltage (J-V) characteristic showed small photovoltaic effect with an open-circuit voltage (Voc) of 0.058 mV, a short circuit current density (Jsc) of 3.83 mA/cm2, a fill factor (FF) of 0.41 and an efficiency (n) of 0.092 %.Item Thickness-dependent electrochromic properties of amorphous tungsten trioxide thin films(Jadavpur University, 2017) Patel, K.J.; Bhatt, G.G.; Ray, J.R.; Patel, S.S.; Panchal, C.J.; Priya, Suryavanshi; Desai, R.R; Kheraj, V.A; Опанасюк, Анатолій Сергійович; Опанасюк, Анатолий Сергеевич; Opanasiuk, Anatolii SerhiiovychTungsten Trioxide (WO3) thin films were grown by thermal evaporation method to study the effect of film’s thickness on its electrochromic (EC) properties. The WO3thin films of different thicknesses were grown on Indium Tin Oxide (ITO) coated glass and soda lime (bare) glass substrate held at room temperature. The surface composition of the thin films was investigated using X-ray photoelectron spectroscopy measurement, which showed the oxygen to tungsten atomic composition ratio to be nearly 2.97. The EC properties of the thin films were examined using electrochemical techniques. Cyclic-voltammetery shows the diffusion coefficient (D) of the intercalated H+ ion in the WO3 thin film increases with the film’s thickness. It turns out that the ‘thicker’ film exhibits better coloration efficiency (CE) as compared to the ‘thinner’ film. The coloration time was found to be independent of film thickness; however, the bleaching time increases as the film thickness increases.Item Characterization Cupper Oxide thin films(Львівський національний університет ім. Івана Франка, 2015) Д`яченко, Олексій Вікторович; Дьяченко, Алексей Викторович; Diachenko, Oleksii Viktorovych; Опанасюк, Анатолій Сергійович; Опанасюк, Анатолий Сергеевич; Opanasiuk, Anatolii Serhiiovych; Nam, D.; Cheong, H.For obtaining of the CuO thin films have used spray pyrolysis method. Glass plates were cleaned in ultrasonic bath and washed with ethanol, used as a substrates. We used an aqueous solution of copper chloride (CuCl22H2O) with a concentration of 0.05 M as a precursor. The substrate temperature range from 570 to 720 K, with step Т=50 K. For atomization of precursor the air flow with a pressure of 0.25 MPa was used.Item Сurrent-voltage characteristics of film materials(Sumy State University, 2016) Подуремне, Дмитро Васильович; Подуремне, Дмитрий Васильевич; Poduremne, Dmytro VasylovychOn the basis of thin films the following elements of integrated circuits (IC) are made in microelectronics: film resistors; electrodes (electrode film capacitors, spiral inductors busducts, installation guides, closures MIS - transistors) contact paths and platforms; auxiliary elements. Electrical connection of metals and semiconductors with metallic conductors is performed using layered condensation and formation of ohmic contacts not rectifier, the quality of which is largely dependent on parameters and characteristics of microelectronic devices, their reliability and durability. The metal / semiconductor (Me/Sem) can be rectifying (if potential barrier between the metal and semiconductor tunnel-opaque) or ohmic (potential barrier if it is missing or tunnel-transparent to electrons). Formation of single- and two-layer films based on metalsItem Raman spectroscopy of nanocrystalline Cu2ZnSnS4 thin films obtained by pulsed spray pyrolysis(Львівський національний університет ім. Івана Франка, 2015) Доброжан, Олександр Анатолійович; Доброжан, Александр Анатольевич; Dobrozhan, Oleksandr Anatoliiovych; Опанасюк, Анатолій Сергійович; Опанасюк, Анатолий Сергеевич; Opanasiuk, Anatolii Serhiiovych; Cheong, H.; Nam, D.The sprayed CZTS thin films were deposited using an aqueous solution containing CuCl2·2H2O (0.02 M), ZnCl2 (0.01 M), SnCl2·2H2O (0.015 M) and SC(NH2)2 (0.1 M) at the temperature substrate of 400 0C with the different values of starting solution volume per sample (2 ml, 3 ml, 4 ml, 5 ml).Item Post-growth treatment of SnxSy thin films(E-MRS (European Materials Research Society), 2016) Косяк, Володимир Володимирович; Косяк, Владимир Владимирович; Kosiak, Volodymyr Volodymyrovych; Возний, Андрій Петрович; Возный, Андрей Петрович; Voznyi, Andrii Petrovych; Onufrijevs, P.; Grase, L.; Vecstaudža, J.; Опанасюк, Анатолій Сергійович; Опанасюк, Анатолий Сергеевич; Opanasiuk, Anatolii Serhiiovych; Medvids, A.; Mezinskis, G.In this study, the effect of post-growth thermal annealing and laser irradiation on phase composition, structural, optical and electrical properties of SnS2 obtained by the close-spaced sublimation on ITO substrates was studied. It was found, by using EDS, XRD and Raman methods that as-grown samples have single phase SnS2 structure and their chemical composition is close to stoichiometric.