Structure and Properties NbN and Nb-Si-N Deposited by Magnetron Sputtering
| dc.contributor.author | Ivashchenko, V.I. | |
| dc.contributor.author | Scrynskyy, P.L. | |
| dc.contributor.author | Lytvyn, O.S. | |
| dc.contributor.author | Rogoz, V.M. | |
| dc.contributor.author | Sobol, O.V. | |
| dc.contributor.author | Kuzmenko, A.P. | |
| dc.date.accessioned | 2014-10-24T16:25:25Z | |
| dc.date.available | 2014-10-24T16:25:25Z | |
| dc.date.issued | 2014 | |
| dc.description.abstract | NbN and Nb-Si-N films were deposited by magnetron sputtering the Nb and Si targets on silicon wafers at various bias voltage, Us. The films were investigated by an atomic force microscope (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and nanoindentation. The deposited films were annealed to establish their thermal stability. The NbN films were nanostructured, and the Nb-Si-N films had a nanocomposite structure, and represented an aggregation of δ-NbNx nanocrystallites embedded into the amorphous Si3N4 tissue (nc-δ-NbNx/a-Si3N4). | ru_RU |
| dc.identifier.citation | Proc. NAP 3, 01NTF22 (2014) | ru_RU |
| dc.identifier.uri | http://essuir.sumdu.edu.ua/handle/123456789/37153 | |
| dc.language.iso | en | ru_RU |
| dc.publisher | Sumy State University | ru_RU |
| dc.rights.uri | cne | en_US |
| dc.subject | AFM | ru_RU |
| dc.subject | XRD | ru_RU |
| dc.subject | NbN | ru_RU |
| dc.subject | Nb-Si-N | ru_RU |
| dc.subject | XPS | ru_RU |
| dc.title | Structure and Properties NbN and Nb-Si-N Deposited by Magnetron Sputtering | ru_RU |
| dc.type | Article | ru_RU |
Files
Original bundle
1 - 1 of 1
No Thumbnail Available
- Name:
- Іvashchenko_Scrynskyy_Lytvyn_Rogoz_Sobol_Kuzmenko.pdf
- Size:
- 896.59 KB
- Format:
- Adobe Portable Document Format
License bundle
1 - 1 of 1
No Thumbnail Available
- Name:
- license.txt
- Size:
- 7.79 KB
- Format:
- Item-specific license agreed upon to submission
- Description: