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| Issue Year | Title | Author(s) | Type | Views | Downloads |
|---|---|---|---|---|---|
| 2018 | Effect of Intrinsic Layer Thickness on PIN Structure for Tandem Solar Cell Based on Indium Gallium Nitride Using AMPS -1D | Souilah, O.; Benzair, A.; Dennai, B.; Khachab, H. | Article | 11147915 | 11819275 |
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Keywords
- 1 efficiency
- 1 InGaN
- 1 PIN structure
- 1 simulation
- 1 solar cell
- 1 tandem
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