Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/70909
Or use following links to share this resource in social networks: Recommend this item
Title Effect of Intrinsic Layer Thickness on PIN Structure for Tandem Solar Cell Based on Indium Gallium Nitride Using AMPS -1D
Authors Souilah, O.
Benzair, A.
Dennai, B.
Khachab, H.
Keywords solar cell
tandem
simulation
PIN structure
AMPS-1D
efficiency
InGaN
Type Article
Date of Issue 2018
URI http://essuir.sumdu.edu.ua/handle/123456789/70909
Publisher Sumy State University
License
Citation Effect of Intrinsic Layer Thickness on PIN Structure for Tandem Solar Cell Based on Indium Gallium Nitride Using AMPS -1D [Текст] / O. Souilah, A. Benzair, B. Dennai, H. Khachab // Журнал нано- та електронної фізики. - 2018. - Т.10, № 4. - 04013. - DOI: 10.21272/jnep.10(4).04013.
Abstract In this work we have studied The effect of thickness of the intrinsic layer in the PIN structure of InGaN tandem solar cells such as photo generation rate, efficiency and recombination rate through the cells. Improvement around of 13 % of PIN tandem solar cell over PN tandem solar cell is observed for low doping concentration (NA = 1016 cm – 3; ND = 1018 cm – 3) and surface recombination (103cm/s). The photo-generated shortcircuit current density (Jsc) and the open-circuit voltage (Voc) of structures under AM 1,5G (one sun) illumination, are simulated for different thickness of intrinsic layer varying from 50 nm to 350 nm.
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

Views

Finland Finland
1
Ukraine Ukraine
16
Unknown Country Unknown Country
12

Downloads

Unknown Country Unknown Country
11

Files

File Size Format Downloads
Souilah_solar_cell.pdf 449,31 kB Adobe PDF 11

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.