Показаны результаты 1 - 4 из 4
| Год выпуска | Название | Автор(ы) | Тип | Просмотров | Загружено |
|---|---|---|---|---|---|
| 2018 | Effect of Intrinsic Layer Thickness on PIN Structure for Tandem Solar Cell Based on Indium Gallium Nitride Using AMPS -1D | Souilah, O.; Benzair, A.; Dennai, B.; Khachab, H. | Article | 11147915 | 11819275 |
| 2021 | Effect of ZrO2 Dielectric over the DC Characteristics and Leakage Suppression in AlGaN/InGaN/GaN DH MOS-HEMT | Sandeep, V.; Charles Pravin, J. | Article | -731388192 | 1522535297 |
| 2013 | Enhanced Luminescence of InGaN / GaN Vertical Light Emitting Diodes with an InGaN Protection Layer | Lam, N.D.; Kim, S.; Lee, J.J.; Choi, K.R.; Doan, M.H.; Lim, H. | Conference Papers | 7862629 | 1658154 |
| 2015 | Heterostructure Active Area Optimization by Simulation | Rabinovich, O.I.; Didenko, S.I.; Legotin, S.A.; Fedorchenko, I.V.; Osipov, U.V. | Article | 15993506 | 17047321 |