Nanostructured NaBiTe2 thin films and their properties

Bilozertseva, V.I.; Gaman, D.A.; Khlyap, H.M.; Mamalui, A.A.; Dyakonenko, N.I.; Petrenko, L.G.

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Title	Nanostructured NaBiTe2 thin films and their properties
Authors	Bilozertseva, V.I. Gaman, D.A. Khlyap, H.M. Mamalui, A.A. Dyakonenko, N.I. Petrenko, L.G.
ORCID
Keywords	films плівка пленка chalcogenide халькогениды халькогеніди
Type	Conference Papers
Date of Issue	2011
URI	http://essuir.sumdu.edu.ua/handle/123456789/20541
Publisher	Видавництво СумДУ
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Citation	Nanostructured NaBiTe2 thin films and their properties [Текст] / V.I. Bilozertseva, D.A. Gaman, H.M. Khlyap et al. // Nanomaterials: applications & properties. Proceedings : 1-st International conference, Alushta, Crimea, 27-30 Semptember 2011 / Edited by: A. Pogrebnjak, T. Lyutyy, S. Protsenko. — Sumy : Sumy State University, 2011. — V.1, P.ІІ. — C. 280-283.
Abstract	Multicomponent chalcogenide-contained films are appeared as an interesting nonequilibrium thermodynamic system. Structural and electric field-induced characteristics of these materials are not investigated. The paper reports for the first time experimental data on growth, morphology and electrophysical properties of NaBiTe2 thin films. The investigated samples were condensed on glass substrates under deposition rate 0.1-0.5 nm/s at T = 300 K and vacuum level P = 10-3 Pa. Metal-semiconductor (MS) Cr/NaBiTe2 structures were prepared for electrical studies. Room-temperature time dependence of the current flowing through the investigated structure under applied electric field is also discussed. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/20541
Appears in Collections:	Наукові видання (ЕлІТ)