Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/20637
Title: Band-structure analysis in (Ga,Mn)As epitaxial layers
Authors: Yastrubchak, O.
Zuk, J.
Gluba, I.
Domagala, J.Z.
Sadowski, J.
Wosinski, T.
Keywords: spintronics
спинтроники
спінтроніки
diluted ferromagnetic semiconductor
ферромагнитный полупроводник
феромагнітний напівпровідник
Issue Year: 2011
Publisher: Видавництво СумДУ
Citation: Band-structure analysis in (Ga,Mn)As epitaxial layers [Текст] / O. Yastrubchak, J. Zuk, L. Gluba et al. // Nanomaterials: applications & properties. Proceedings : 1-st International conference, Alushta, Crimea, 27-30 Semptember 2011 / Edited by: A. Pogrebnjak, T. Lyutyy, S. Protsenko. — Sumy : Sumy State University, 2011. — V.1, P.ІІ. — C. 328-338.
Abstract: The ternary III-V semiconductor (Ga,Mn)As has recently drawn a lot of attention as the model diluted ferromagnetic semiconductor, combining semiconducting properties with magnetism. (Ga,Mn)As layers are usually gown by the low-temperature molecular-beam epitaxy (LT-MBE) technique. Below a magnetic transition temperature, TC, substitutional Mn2+ ions are ferromagnetically ordered owing to interaction with spin-polarized holes. However, the character of electronic states near the Fermi energy and the valence-band structure in ferromagnetic (Ga,Mn)As are still a matter of controversy. The photoreflectance (PR) spectroscopy was applied to study the band-structure evolution in (Ga,Mn)As layers with increasing Mn content. We have investigated thick (800 - 700nm and 230 – 300nm) (Ga,Mn)As layers with Mn content in the range from 0.001% to 6% and, as a reference, undoped GaAs layer, grown by LT-MBE on semiinsulating (001) GaAs substrates. Our findings were interpreted in terms of the model, which assumes that the mobile holes residing in the valence band of ferromagnetic (Ga,Mn)As and the Fermi level position determined by the concentration of valenceband holes. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/20637
URI: http://essuir.sumdu.edu.ua/handle/123456789/20637
Type: Conference Papers
Appears in Collections:Наукові видання (ЕлІТ)

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