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Title | Temperature dependence of resistivity of porous silicon formed on N-substrates |
Authors |
Redko, S.V.
Chubenko, E.B. Klyshko, A.A. Kholostov, K.I. Bondarenko, V.P. Prischepa, S.I. Trezza, Michela Cirillo, Carla Attanasio, Carmine |
ORCID | |
Keywords |
porous silicon пористый кремний пористий кремній |
Type | Conference Papers |
Date of Issue | 2011 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/20638 |
Publisher | Видавництво СумДУ |
License | |
Citation | Temperature dependence of resistivity of porous silicon formed on N-substrates [Текст] / S.V. Redko, E.B. Chubenko, A.A. Klyshko et al. // Nanomaterials: applications & properties. Proceedings : 1-st International conference, Alushta, Crimea, 27-30 Semptember 2011 / Edited by: A. Pogrebnjak, T. Lyutyy, S. Protsenko. — Sumy : Sumy State University, 2011. — V.1, P.ІІ. — C. 320-323. |
Abstract |
Results of measurement of resistivity of mesoporous silicon formed on n-type substrates in a wide temperature range are presented. Measurements show that at low temperatures there is a growth of resistance of four orders of magnitude compared to that at
room temperature which occurs in a relatively narrow temperature range.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/20638 |
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