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Title Optical monitoring of technological processes for fabrication of thin-film nanostructures
Authors Luk'yanov, A.Yu.
Volkov, P.V.
Goryunov, A.V.
Daniltsev, V.M.
Pryakhin, D.A.
Tertyshnik, A.D.
Khrykin, O.I.
Shashkin, V.I.
Keywords оптичний моніторинг
оптический мониторинг
optical monitoring
Type Conference Papers
Date of Issue 2011
URI http://essuir.sumdu.edu.ua/handle/123456789/20681
Publisher Sumy State University
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Citation Optical monitoring of technological processes for fabrication of thin-film nanostructures [Текст] / A.Yu. Luk'yanov, P.V. Volkov, A.V. Goryunov et al. // Nanomaterials: applications & properties. Proceedings : 1-st International conference, Alushta, Crimea, 27-30 Semptember 2011 / Edited by: A. Pogrebnjak, T. Lyutyy, S. Protsenko. — Sumy : Sumy State University, 2011. — V.2, P.ІІ. — C. 315-321.
Abstract Thisworkillustratesapplicationofthe uniquefiber-optic instrumentationforin situmonitoringofseveral technologicalprocessescommonlyusedinfabricationof semiconducting thin-film nanostructures. This instrumentation is basedonprinciplesoflowcoherenttandeminterferometry, whichdetermineshighsensitivityandprecision in measuring basic technological parameters, such as thickness of forming layers, temperature and bending of the substrate.The probing wavelength 􀈜 = 1.55 􀈝m allows carrying out the measurements on majority of substrates for semiconductor technology: Si, SOI, GaAs, InP, GaP, Al2O3, diamond, ZrO2:Y. Monitoring of such processes as MOVPE, MBEandplasmaetchingin various set-ups was realized. The absolute resolution achieved in these experiments was limited only by calibration accuracy and corresponds to 1􀉨 􀉋at sensitivity of 0.01􀉨 􀉋. The accuracy limit in estimating the thickness of layers during their growth is 2 nm. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/20681
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