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Title | Optical monitoring of technological processes for fabrication of thin-film nanostructures |
Authors |
Luk'yanov, A.Yu.
Volkov, P.V. Goryunov, A.V. Daniltsev, V.M. Pryakhin, D.A. Tertyshnik, A.D. Khrykin, O.I. Shashkin, V.I. |
ORCID | |
Keywords |
оптичний моніторинг оптический мониторинг optical monitoring |
Type | Conference Papers |
Date of Issue | 2011 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/20681 |
Publisher | Sumy State University |
License | |
Citation | Optical monitoring of technological processes for fabrication of thin-film nanostructures [Текст] / A.Yu. Luk'yanov, P.V. Volkov, A.V. Goryunov et al. // Nanomaterials: applications & properties. Proceedings : 1-st International conference, Alushta, Crimea, 27-30 Semptember 2011 / Edited by: A. Pogrebnjak, T. Lyutyy, S. Protsenko. — Sumy : Sumy State University, 2011. — V.2, P.ІІ. — C. 315-321. |
Abstract |
Thisworkillustratesapplicationofthe uniquefiber-optic instrumentationforin situmonitoringofseveral
technologicalprocessescommonlyusedinfabricationof semiconducting
thin-film nanostructures. This instrumentation is basedonprinciplesoflowcoherenttandeminterferometry,
whichdetermineshighsensitivityandprecision in measuring
basic technological parameters, such as thickness of forming layers, temperature and
bending of the substrate.The probing wavelength = 1.55 m allows carrying out the
measurements on majority of substrates for semiconductor technology: Si, SOI, GaAs,
InP, GaP, Al2O3, diamond, ZrO2:Y. Monitoring of such processes as MOVPE,
MBEandplasmaetchingin various set-ups was realized. The absolute resolution achieved
in these experiments was limited only by calibration accuracy and corresponds to 1 at
sensitivity of 0.01 . The accuracy limit in estimating the thickness of layers during
their growth is 2 nm.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/20681 |
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