Surface topography analysis of water vapor plasma irradiation induced effects in Ті films

Abstract

In the present work, the changes of surface topography driven by interaction of ions extracted from low-pressure water vapor plasma are studied. Titanium 0.5-1 um thickness films were deposited on silicon wafer substrates using magnetron sputtering technique and immersed in water vapor plasma at pressure 1-10 Pa. The samples were located on the cathode of magnetron and affected by high-flux, low-energy ions extracted by 250-300V bias negative voltage. The used Ti and W cathodes were water cooled. It is shown that the surface roughness of irradiated films changes in dependence of irradiation fluence and intensity. The experimental results are explained on the basis of the analysis of the selective erosion of oxide phases synthesized in the near-surface region. Three sputtering modes are distinguished: (i) metallic, (ii) oxide and (iii) composite: metallic with clusters of oxide. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/20846