Layered semiconductor InSe as a standard nanorelief in the metrology of nanoobjects

Abstract

Intensive development of nanotechnology requires high-precision measurements on atomic and molecular levels by creating the metrological system for measurements, at the first turn, the length in the nanometer scale. Such measurements require standard samples of nanorelief surface. High chemical stability and the absence of dangling bonds (defects), low surface roughness of cleaved surface allows to use the Van der Waals surface of InSe single crystals as the standard nanorelief. This is evidenced by the research1es of morphology for Van der Waals surface by scanning tunneling microscopy in which images with atomic resolution were obtained. A single crystal InSe, was grown by vertical Bridgman-Stockbarger method. The crystal has -􀁊-polytype rhombohedral structure . with periods a = 4.003 Å, and c = 24.9553 Å (in hexagonal axes). Thus InSe is appropriate standard nanorelief for probe microscopy. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/20851