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Title Formation of silicon-based nanostructures by compression plasma flows
Authors Petukhou, Yu.A.
Uglov, V.V.
Kvasov, N.T.
Punko, A.V.
Doroshevich, I.L.
Astashynski, V.M.
Kuzmitski, A.M.
ORCID
Keywords nanoclusters
нанокластеры
нанокластери
silicides
силіциди
силициды
dendrites
дендриты
дендрити
Type Conference Papers
Date of Issue 2011
URI http://essuir.sumdu.edu.ua/handle/123456789/20860
Publisher Видавництво СумДУ
License
Citation Formation of silicon-based nanostructures by compression plasma flows [Текст] / Yu.A. Petukhou, V.V. Uglov, N.T. Kvasov et al. // Nanomaterials: applications & properties. Proceedings : 1-st International conference, Alushta, Crimea, 27-30 Semptember 2011 / Edited by: A. Pogrebnjak, T. Lyutyy, S. Protsenko. — Sumy : Sumy State University, 2011. — V.1, P.ІІ. — C. 440-447.
Abstract The use of compression flows (CPF) for the formation of metal and silicide nanostructures for data storage devices, thermoelectric materials and solar cells is presented. The action of CPF with injected metallic powder results in the formation of coatings composed of spherical clusters with complex structure: each submicron cluster (0,1-0,2 μm radius) is formed from a number of nanosized ones (10-25 nm radius). The action of CPF on binary “metal-silicon” systems provides formation of branched silicon dendrites (tip radius ~ 200 nm, primary spacing ~ 1,2 μm); interdendritic space is filled with nanostructured (50-100 nm) “silicide-silicon” and “monosilicide-disilicide” composite due to melting of the surface layer, rapid solidification (~ 10-3 m/s) and constitutional overcooling. Mechanisms of formation of nanostructured composites on silicon surface and in thick surface layers is discussed in terms of order parameter evolution and non-equilibrium solidification models. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/20860
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