"Etchability" of ion tracks in Si02/Si and Si3N4/Si thin layers

Vlasukova, L.A.; Komarov, V.N.; Skuratov, V.A.; Yuvchenko, V.N.

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Title	"Etchability" of ion tracks in Si02/Si and Si3N4/Si thin layers
Authors	Vlasukova, L.A. Komarov, V.N. Skuratov, V.A. Yuvchenko, V.N.
ORCID
Keywords	swift ions быстрые ионы швидкі іони
Type	Conference Papers
Date of Issue	2011
URI	http://essuir.sumdu.edu.ua/handle/123456789/20872
Publisher	Sumy State University
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Citation	"Etchability" of ion tracks in Si02/Si and Si3N4/Si thin layers [Текст] / L.A. Vlasukova, F.F. Komarov, V. N. Yuvchenko, V.A. Skuratov // Nanomaterials: applications & properties. Proceedings : 1-st International conference, Alushta, Crimea, 27-30 Semptember 2011 / Edited by: A. Pogrebnjak, T. Lyutyy, S. Protsenko. — Sumy : Sumy State University, 2011. — V.2, P.ІІ. — C. 393-399.
Abstract	We have calculated radii and lifetime of the molten regions or the regions heated to the melting point that are formed under irradiation of amorphous SiO2 and Si3N4 with swift ions. A computer simulation was carried out on the base of thermal spike model. A comparison of calculated track parameters with ion track etching data have been made for these materials. It is shown that an existence of molten region along swift ion trajectory may be a criterion for a track “etchability” in the case of SiO2. In the same conditions of chemical etching diameter of etched tracks in SiO2 is proportional to the radius and lifetime of the molten region. This information is important for a correct choice of irradiation regime aimed at preparation of nanoporous layers with high pore density (􀂕 10 10 cm-2). When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/20872
Appears in Collections:	Наукові видання (ЕлІТ)