Schottky contact of gallium on p-type silicon

Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/22035

Or use following links to share this resource in social networks: Recommend this item

Title	Schottky contact of gallium on p-type silicon
Authors	Modi, B.P. Patel, K.D.
ORCID
Keywords	тонкая пленка тонка плівка thin film межфазное напряжение міжфазнa напругу interfacial strain
Type	Article
Date of Issue	2011
URI	http://essuir.sumdu.edu.ua/handle/123456789/22035
Publisher	Видавництво СумДУ
License
Citation	Modi, B.P. Schottky contact of gallium on p-type silicon [Текст] / B.P. Modi, K.D. Patel // Journal of Nano- and Electronic Physics. — 2011. — Vol.3, № 1, Part IV : Proceedings of the International Symposium on Semiconductor Materials and Devices (ISSMD-2011), Vadodara, India, 28-30 January 2011. — P. 684-690.
Abstract	The evolution of barrier at Schottky contact and its stabilization to value characterized by the barrier height and unambiguous measurement is still being curiously perused as they hold the key control and manufacture of tailor made Schottky devices for a host of existing and potential for future applications in electronics, optoelectronics and microwave devices. In this context, gallium – silicon Schottky diode has been fabricated and analyzed. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/22035
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)