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Title | Studies on metal-oxide semiconductor ZnO as a hydrogen gas sensor |
Authors |
Prajapati, C.S.
Sahay, P.P. |
ORCID | |
Keywords |
metal-oxide semiconductor металлооксидный полупроводник металооксидний напівпровідник |
Type | Article |
Date of Issue | 2011 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/22078 |
Publisher | Видавництво СумДУ |
License | Copyright not evaluated |
Citation | Prajapati, C.S. Studies on metal-oxide semiconductor ZnO as a hydrogen gas sensor [Текст] / C.S. Prajapati, P.P. Sahay // Journal of Nano- and Electronic Physics. — 2011. — Vol.3, № 1, Part IV : Proceedings of the International Symposium on Semiconductor Materials and Devices (ISSMD-2011), Vadodara, India, 28-30 January 2011. — P. 714-720. |
Abstract |
Metal-oxide semiconductor ZnO thin films were prepared on glass slides by spray pyrolysis technique at substrate temperature (410 ± 10) °C. Zn(NO3)2.6H2O was used as the precursor solution. The films thus prepared are undergone for structural and
morphological studies using X-ray diffraction and scanning electron microscopy The films are found to be polycrystalline zinc oxide in nature, possessing hexagonal wurtzite crystal structure and nanocrystalline in grain size ~ 30-35 nm. The hydrogen sensing performance of the films has been investigated for various concentration of hydrogen in air at different operating temperatures in the range 200-400 °C. It is
observed that the response is maximum (44.3 %) at the operating of temperature of 250 °C for 0.8 vol % concentration of hydrogen in air. A possible sensing mechanism for hydrogen has been proposed.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/22078 |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
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