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Title Preparation and properties of zinc doped cadmium selenide compounds by e-beam evaporation
Authors Kissinger, N.J. Suthan
Perumal, K.
Suthagar, J.
ORCID
Keywords селенид цинка
селенід цинку
zinc selenide
испарение
випаровування
evaporation
Type Article
Date of Issue 2011
URI http://essuir.sumdu.edu.ua/handle/123456789/22991
Publisher Видавництво СумДУ
License
Citation Kissinger, N.J. Suthan Preparation and properties of zinc doped cadmium selenide compounds by e-beam evaporation [Текст] / N.J. S. Kissinger, K. Perumal, J. Suthagar // Журнал нано- та електронної фізики. — 2011. — Т. 3, № 3. — С. 5-14.
Abstract Cd1 – xZnxSe films with different zinc content were deposited by electron beam evaporation technique onto glass substrates for the application of solid-state photovoltaic devices. The structural, surface morphological and optical properties of Cd1 – xZnxSe films have been studied in the present work. The host material, Cd1 – xZnxSe, have been prepared by the physical vapor deposition method of electron beam evaporation technique (PVD: EBE) under a pressure of 1 10 – 5 mbar. The X-ray diffractogram indicates that these alloy films are polycrystalline in nature, hexagonal structure with strong preferential orientation of the crystallites along (002) direction. Linear variation of lattice constant with composition (x) is observed. The optical properties shows that the band gap (Eg) values varies from 2.08 to 2.64 eV as zinc content varies from 0.2 to 0.8. The surface morphological studies show the very small, fine and hardly distinguishable grains smeared all over the surface. It is observed that the grain size is decreasing with increasing zinc content. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/22991
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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China China
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Germany Germany
178
Greece Greece
173331449
India India
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1
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