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Title High Second-Order Nonlinear Susceptibility Induced in GaN/AlxGa1 – xN Coupled Quantum Well for Infrared Photodectors Application
Authors Elkadadra, A.
Abouelaoualim, D.
Oueriagli, A.
Outzourhit, A.
ORCID
Keywords Second-harmonic generation
Wurtzite quantum well
Strain-induced piezoelectric
Density matrix approach
Numerov method
Type Article
Date of Issue 2012
URI http://essuir.sumdu.edu.ua/handle/123456789/27772
Publisher Сумський державний університет
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Citation A. Elkadadra, D. Abouelaoualim, A. Oueriagli, A. Outzourhit, J. Nano-Electron. Phys. 4 No 2, 02002 (2012)
Abstract The second harmonic generation (SHG) of GaAs/AlxGa1 − xAs a wurtzite coupled quantum wells (CQWs) is studied theoretically for different widths of well, barrier and values Al concentration, taking into account the strain-induced piezoelectric (PZ) effects. The analytical expression of the SHG susceptibility is deduced by using the compact density matrix approach. The confined wave functions and energies of electrons GaN/AlxGA1 – x N are calculated in the effective-mass approximation, solving the Schrödinger equation by Numerov’s method using six order approximations for the derivatives. The calculated results also reveal that by adjusting the widths of well, the barrier and Al concentration respectively, a set of optimal structural parameters can be found for obtaining a strong SHG susceptibility. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/27772
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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