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Title Absorption and luminescence of hydrogen and oxygen passivated silicon quantum dots
Authors Rajesh, C.
Mahamuni, S.
Ghaisas, S.V.
Keywords IV semiconductor
photoluminescence
UV-VIS absorption
nanoparticles
photovoltaics
Type Article
Date of Issue 2011
URI http://essuir.sumdu.edu.ua/handle/123456789/27881
Publisher Видавництво СумДУ
License
Citation Rajesh, C. Absorption and luminescence of hydrogen and oxygen passivated silicon quantum dots [Текст] / C. Rajesh, S. Mahamuni, S.V. Ghaisas // Journal of Nano- and Electronic Physics. — 2011. — Vol. 3, № 1, Part V : Proceedings of the International Symposium on Semiconductor Materials and Devices (ISSMD-2011), Vadodara, India, 28-30 January 2011. — P. 903-909.
Abstract Silicon (Si) quantum dots (QDs) passivated with oxygen and hydrogen of size 1 nm in diameter are prepared by wet chemical route and electrochemical route respectively. The optical measurements reveal the strong absorption feature around 4.7 eV and weak absorption at 3.4 eV for oxygen passivated Si QDs. Hydrogen passivated Si QDs of the same size show absorption at 4.9 eV. Both the oxygen and hydrogen passivated Si QDs show broad luminescence around 3.9 and 3.8 eV. Films of these QDs, when coated on crystalline silicon solar cells, show an increase in the efficiency of the solar cell by 12 %. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/27881
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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