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Title | Surface states and photoluminescence from porous silicon |
Authors |
Nazrul, Islam Md
Kumar, Satyendra |
ORCID | |
Keywords |
porous silicon photoluminescence quantum confinement surface states raman scattering |
Type | Article |
Date of Issue | 2011 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/27882 |
Publisher | Видавництво СумДУ |
License | |
Citation | Nazrul, Islam Md. Surface states and photoluminescence from porous silicon [Текст] / Islam Md. Nazrul, S. Kumar // Journal of Nano- and Electronic Physics. — 2011. — Vol. 3, № 1, Part V : Proceedings of the International Symposium on Semiconductor Materials and Devices (ISSMD-2011), Vadodara, India, 28-30 January 2011. — P. 910-913. |
Abstract |
Photoluminescence (PL) spectra of freshly electrochemically etched porous silicon layers anodized under various condition have been measured and analyzed according to quantum confinement (QC) model and surface state models. The results support the combination of QC and surface state models for visible PL from fresh PS layers.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/27882 |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
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File | Size | Format | Downloads |
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Islam.pdf | 157,22 kB | Adobe PDF | 275321748 |
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