Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/27885
Or use following links to share this resource in social networks: Recommend this item
Title Current transport behaviour of Au/n-GaAs Schottky diodes grown on Ge substrate with different epitaxial layer thickness over a wide temperature range
Authors Padha, N.
Sachdeva, R.
Sihotra, R.
Krupanidhi, S.B.
ORCID
Keywords ideality factor
barrier height
thermionic field emission
tunneling
inhomogenities
junction breakdown
richardson constant
Type Article
Date of Issue 2011
URI http://essuir.sumdu.edu.ua/handle/123456789/27885
Publisher Видавництво СумДУ
License
Citation Current transport behaviour of Au/n-GaAs Schottky diodes grown on Ge substrate with different epitaxial layer thickness over a wide temperature range [Текст] / N. Padha, R. Sachdeva, R. Sihotra, S.B. Krupanidhi // Journal of Nano- and Electronic Physics. — 2011. — Vol. 3, № 1, Part V. — P. 926-936.
Abstract The work presents temperature dependent forward and reverse current-voltage (I-V) analyses of n-GaAs/Au Schottky Diodes grown on n+ Ge substrate with different epitaxial layer thicknesses. While some of the Schottky diodes follow TED mechanism, others exceed significantly from this theory due to existence of patches of reduced barrier height embedded in the Schottky interface. The zero bias barrier heights (φbo) increase (0.649 to 0.809 eV) while the ideality factors (η) decrease (1.514 to 1.052) with increase in epitaxial layer thickness (1-4 μm), thus, indicating similar behaviour to that observed for the I-V characteristics of the undertaken Schottky diodes with decreasing temperature. It all indicated the existence of barrier inhomogenities over the M-S interface. The breakdown behaviour analysis of these diodes showed some interesting results; the breakdown voltage (VBR) decreases with temperature and shows ‘Defect Assisted Tunneling’ phenomenon through surface or defect states in the 1 μm thick epitaxial layer Schottky diode while VBR increases with temperature in 3 μm and 4 μm thick epitaxial layer Schottky diodes which demonstrate ‘Avalanche Multiplication’ mechanism responsible for junction breakdown. The reverse breakdown voltage is also seen to increase (2.7-5.9 Volts) with the increase in epitaxial layer thickness of the diodes. The undertaken diodes have been observed to follow TFE mechanism at low temperatures (below 200 K) in which the tunneling current component increases with epitaxial layer thickness which has been ascribed as an impact of GaAs/Ge hetero-interface over the Au/n-GaAs Schottky barrier. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/27885
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

Views

Armenia Armenia
1
Canada Canada
1
Chile Chile
1
China China
1970053693
EU EU
1
France France
2
Germany Germany
261
Greece Greece
1
India India
1
Ireland Ireland
1211428
Italy Italy
1
Japan Japan
1
Kazakhstan Kazakhstan
1
Latvia Latvia
1
Lithuania Lithuania
1
Morocco Morocco
1
Netherlands Netherlands
5297238
Pakistan Pakistan
3
Romania Romania
1
Russia Russia
12
South Korea South Korea
2
Turkey Turkey
6
Ukraine Ukraine
84496821
United Arab Emirates United Arab Emirates
1
United Kingdom United Kingdom
38914245
United States United States
1970053694
Unknown Country Unknown Country
84496820
Vietnam Vietnam
154184

Downloads

China China
21
France France
1
Germany Germany
-140288872
India India
1
Japan Japan
1
Kazakhstan Kazakhstan
1
Lithuania Lithuania
1
Oman Oman
1
Pakistan Pakistan
1
Russia Russia
2
Taiwan Taiwan
1
Turkey Turkey
1
Ukraine Ukraine
253485295
United Kingdom United Kingdom
1
United States United States
-140288871
Unknown Country Unknown Country
138
Vietnam Vietnam
1

Files

File Size Format Downloads
Padha.pdf 405,44 kB Adobe PDF -27092276

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.