Будь ласка, використовуйте цей ідентифікатор, щоб цитувати або посилатися на цей матеріал:
http://essuir.sumdu.edu.ua/handle/123456789/27885
Використовуйте наступні посилання для розповсюдження матеріалу в соціальних мережах:
Tweet
Рекомендувати цей матеріал
Назва | Current transport behaviour of Au/n-GaAs Schottky diodes grown on Ge substrate with different epitaxial layer thickness over a wide temperature range |
Автори |
Padha, N.
Sachdeva, R. Sihotra, R. Krupanidhi, S.B. |
ORCID | |
Ключові слова |
ideality factor barrier height thermionic field emission tunneling inhomogenities junction breakdown richardson constant |
Вид документа | Стаття |
Дати випуску | 2011 |
URI (Уніфікований ідентифікатор ресурсу) | http://essuir.sumdu.edu.ua/handle/123456789/27885 |
Видавець | Видавництво СумДУ |
Ліцензія | |
Бібліографічний опис | Current transport behaviour of Au/n-GaAs Schottky diodes grown on Ge substrate with different epitaxial layer thickness over a wide temperature range [Текст] / N. Padha, R. Sachdeva, R. Sihotra, S.B. Krupanidhi // Journal of Nano- and Electronic Physics. — 2011. — Vol. 3, № 1, Part V. — P. 926-936. |
Короткий огляд (реферат) |
The work presents temperature dependent forward and reverse current-voltage (I-V) analyses of n-GaAs/Au Schottky Diodes grown on n+ Ge substrate with different epitaxial layer thicknesses. While some of the Schottky diodes follow TED mechanism, others exceed significantly from this theory due to existence of patches of reduced barrier height embedded in the Schottky interface. The zero bias barrier heights (φbo) increase (0.649 to 0.809 eV) while the ideality factors (η) decrease (1.514 to 1.052) with increase in epitaxial layer thickness (1-4 μm), thus, indicating similar behaviour to that observed for the I-V characteristics of the undertaken Schottky diodes with decreasing temperature. It all indicated the existence of barrier inhomogenities over the M-S interface. The breakdown behaviour analysis of these diodes showed some interesting results; the breakdown voltage (VBR) decreases with temperature and shows ‘Defect Assisted Tunneling’ phenomenon through surface or defect states in the 1 μm thick epitaxial layer Schottky diode while VBR increases with temperature in 3 μm and 4 μm thick epitaxial layer Schottky diodes which demonstrate ‘Avalanche Multiplication’ mechanism responsible for junction breakdown. The reverse breakdown voltage is also seen to increase (2.7-5.9 Volts) with the increase in epitaxial layer thickness of the diodes. The undertaken diodes have been observed to follow TFE mechanism at low temperatures (below 200 K) in which the tunneling current component increases with epitaxial layer thickness which has been ascribed as an impact of GaAs/Ge hetero-interface over the Au/n-GaAs Schottky barrier.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/27885 |
Розташовується у зібраннях: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
Views
Armenia
1
Canada
1
Chile
1
China
1970053693
EU
1
France
2
Germany
-140288868
Greece
1
India
1
Ireland
1211428
Italy
1
Japan
1
Kazakhstan
1
Latvia
1
Lithuania
1
Morocco
1
Netherlands
5297238
Pakistan
3
Romania
1
Russia
12
Singapore
1
South Korea
2
Turkey
6
United Arab Emirates
1
United Kingdom
38914245
United States
1904046730
Unknown Country
84496820
Vietnam
154184
Україна
84496821
Downloads
China
21
France
1
Germany
-140288872
India
1
Japan
1
Kazakhstan
1
Lithuania
1
Oman
1
Pakistan
1
Russia
2
Singapore
1
South Korea
1
Taiwan
1
Turkey
1
United Kingdom
1
United States
-140288871
Unknown Country
138
Vietnam
1
Україна
253485295
Files
Файл | Розмір | Формат | Downloads |
---|---|---|---|
Padha.pdf | 405.44 kB | Adobe PDF | -27092274 |
Усі матеріали в архіві електронних ресурсів захищені авторським правом, всі права збережені.