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Title | Designing single chamber hwcvd system for high deposition rate device quality A-Si:h thin films and solar cells |
Authors |
Wadibhasme, N.A.
Soni, S.K. Kumbhar, Alka |
ORCID | |
Keywords |
ydrogenated amorphous silicon HWCVD FTIR Raman spectroscopy Dark and photoconductivity |
Type | Article |
Date of Issue | 2011 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/27890 |
Publisher | Видавництво СумДУ |
License | |
Citation | N.A. Wadibhasme, S.K. Soni, Alka Kumbhar, et al., J. Nano- Electron. Phys. 3 No1, 942 (2011) |
Abstract |
A new single chamber HWCVD with vertically mounted substrates and filaments has been designed for depositing device quality a-Si:H films with high deposition rate. Optimization studies on films deposited in this chamber under a variety of deposition conditions yielded uniform films at more than 7Å/sec deposition rate and with very low oxygen content. These films show a photoconductivity gain of more than 105. The working pressure has been kept quite low at 15 mtorr compared to earlier studies. i-layers of a p-i-n single junction solar cells were deposited on the TCO (Asahi-U type) glass in this reactor. The initial p-layer and the final n-layer were deposited in another system with separate chambers for these doped layers thus exposing the p-layer as well as the i-layer to the atmosphere during the transfer. Using this optimized intrinsic layer, a-Si:H based p-i-n solar cell showed a conversion efficiency of 4.7 %.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/27890 |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
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China
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Germany
189
India
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Lithuania
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Taiwan
101400
Ukraine
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United Kingdom
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File | Size | Format | Downloads |
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Wadibhasme.pdf | 1.07 MB | Adobe PDF | -2077117007 |
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