Analytical estimate of open-circuit voltage of a Schottky-barrier solar cell under high level injection

Abstract

The open-circuit voltage developed across a Schottky-Barrier (SB) solar cell was theoretically modeled to estimate it under high level injection conditions. An Open-circuit voltage (Voc) of 0.709 V was obtained for specific metal/n-Si SB solar cell. A substantial increase of 42.6 % in Voc was noticed while comparing our result with that previously calculated in low level injection conditions. Four different metals suitable for making Schottky contact with n-Si were investigated and calculated the variation of Voc with different values of doping concentrations in the semiconductor. The effect of surface recombination velocities (SRV) of charge carriers on Voc was also estimated at such high level injections. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/27897