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Title Barrier inhomogeneities of Al/p-In2Te3 thin film Schottky diodes
Authors Desai, R.R.
Lakshminarayana, D.
Sachdeva, Ramesh
Patel, P.B.
Panchal, C.J.
Desai, M.S.
Padha, N.
Keywords p-In2Te3 thin film
Schottky diode
Current-voltage (I-V) characteristics
Capacitance-voltage (C-V)
Barrier heigh
Type Article
Date of Issue 2011
URI http://essuir.sumdu.edu.ua/handle/123456789/27900
Publisher Видавництво СумДУ
License
Citation R.R. Desai, D. Lakshminarayana, Ramesh Sachdeva, et al., J. Nano- Electron. Phys. 3 No1, 995 (2011) DOI
Abstract The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of p-In2Te3/Al thin films Schottky diodes papered by Flash Evaporation technique were measured in the temperature range 303-335 K have been interpreted on the basis of the assumption of a Gaussian distribution of barrier heights (φbo) due to barrier height inhomogeneities that prevail at the interface. It has been found that the occurrence of Gaussian distribution of BHs is responsible for the decrease of the apparent BH (φbo) and increase of the ideality factor (η). The inhomogeneities are considered to have a Gaussian distribution with a mean barrier height of (φbm) and standard deviation (σs) at zero-bias. Furthermore, the activation energy value (φb) at T = 0 and Richardson constant (A**) value was obtained as 0.587 eV and 3.09 Acm– 2 K– 1 by means of usual Richardson plots. Hence, it has been concluded that the temperature dependence of the I-V characteristics of p-In2Te3/Al Schottky Diodes can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the BHs. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/27900
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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