Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/30162
Title: Structural and electrical properties of ZnS/CdTe and ZnTe/CdTe heterostructures
Authors: Kurbatov, Denys Ihorovych 
Kosiak, Volodymyr Volodymyrovych
Kolesnyk, Maksym Mykolaiovych
Opanasiuk, Anatolii Serhiiovych 
Danylchenko, Serhii Mykolaiovych
Hnatenko, Yurii Pavlovych 
Keywords: ZnS/CdTe
ZnTe/CdTe
heterostructure
XRD method
thin film solar cells
Issue Year: 2013
Publisher: Materials Chemistry and Physics
Citation: Structural and electrical properties of ZnS/CdTe and ZnTe/CdTe heterostructures [Текст] / Kosyak V.V., Kurbatov D.I., Kolesnyk M.M., Opanasyuk A.S., Danilchenko S.N., Gnatenko Yu.P.// Journal of Materials Chemistry and Physics. – 2013. - doi.org/10.1016/j.matchemphys.2012.12.049
Abstract: We investigated the structural, substructural and electrical properties of ZnS/CdTe and ZnTe/CdTe heterostructures obtained by the close-spaced vacuum sublimation. It was found that the structural properties of CdTe and ZnTe thin films deposited on ZnS or CdTe sublayers are better than those of the films obtained on glass substrate at the same growth conditions. XRD-analysis has shown that Zn(x)Cd(1- x)Te(x = 0.21-0.30) solid solutions having the cubic phase were formed near the films’ interfaces. Furthermore, the saturation current, the ideality factor and the value of the potential barrier height were determined by the analysis of dark currentevoltage characteristics. This makes it possible to establish optimal growth conditions of ZnS/CdTe heterojunctions. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/30162
URI: http://essuir.sumdu.edu.ua/handle/123456789/30162
Type: Article
Appears in Collections:Наукові видання (ЕлІТ)

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