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Title | Structural and electrical properties of ZnS/CdTe and ZnTe/CdTe heterostructures |
Authors |
Kurbatov, Denys Ihorovych
Kosiak, Volodymyr Volodymyrovych Kolesnyk, Maksym Mykolaiovych Opanasiuk, Anatolii Serhiiovych Danylchenko, Serhii Mykolaiovych Hnatenko, Yurii Pavlovych |
ORCID |
http://orcid.org/0000-0002-2754-6367 http://orcid.org/0000-0003-2019-8387 http://orcid.org/0000-0002-1888-3935 http://orcid.org/0000-0002-8173-3948 |
Keywords |
ZnS/CdTe ZnTe/CdTe heterostructure XRD method thin film solar cells |
Type | Article |
Date of Issue | 2013 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/30162 |
Publisher | Materials Chemistry and Physics |
License | |
Citation | Structural and electrical properties of ZnS/CdTe and ZnTe/CdTe heterostructures [Текст] / Kosyak V.V., Kurbatov D.I., Kolesnyk M.M., Opanasyuk A.S., Danilchenko S.N., Gnatenko Yu.P.// Journal of Materials Chemistry and Physics. – 2013. - doi.org/10.1016/j.matchemphys.2012.12.049 |
Abstract |
We investigated the structural, substructural and electrical properties of ZnS/CdTe and ZnTe/CdTe heterostructures obtained by the close-spaced vacuum sublimation. It was found that the structural properties of CdTe and ZnTe thin films deposited on ZnS or CdTe sublayers are better than those of the films obtained on glass substrate at the same growth conditions. XRD-analysis has shown that Zn(x)Cd(1- x)Te(x = 0.21-0.30) solid solutions having the cubic phase were formed near the films’ interfaces. Furthermore, the saturation current, the ideality factor and the value of the potential barrier height were determined by the analysis of dark currentevoltage characteristics. This makes it possible to establish optimal growth conditions of ZnS/CdTe heterojunctions.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/30162 |
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Structural and electrical properties of ZnS-CdTe and ZnTe-CdTe heterostructures.pdf | 88.99 kB | Adobe PDF | -301470701 |
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