Study of Photoluminescence Behaviour of Porous Silicon Samples Prepared at 20 mA Current Density

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Title	Study of Photoluminescence Behaviour of Porous Silicon Samples Prepared at 20 mA Current Density
Authors	Gill, Fateh Singh Gupta, Himanshu Purohit, L.P. Pal, Pankaj K. Sharma, Kiran Dhiman, Neeraj Kumar, R. Mehra, R.M.
ORCID
Keywords	Photoluminescence Quantum dots Nanoparticles
Type	Article
Date of Issue	2013
URI	http://essuir.sumdu.edu.ua/handle/123456789/30973
Publisher	Сумський державний університет
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Citation	Fateh Singh Gill, Himanshu Gupta, L.P. Purohit, et al., J. Nano- Electron. Phys. 5 No 1, 01019 (2013)
Abstract	The paper presents a study on a series of porous silicon films of various thicknesses, prepared at 20 mA current density using a photoluminescence fitting model to determine the average crystallite size of sphe-rical shaped interconnected silicon quantum dots. Discrepancy in photoluminescence behavior of the samples is well explained with this model. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/30973
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)