Optical Dispersion In Annealed Thin Films of S-doped a-Si:H Alloys

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Title	Optical Dispersion In Annealed Thin Films of S-doped a-Si:H Alloys
Authors	Purohit, L.P. Gupta, H. Pal, Pankaj K. Kumar, A. Kumar, R. Mehra, R.M.
ORCID
Keywords	a-Si:H thin films Doping concentrations Annealing temperatures Transmittance Optical constants
Type	Article
Date of Issue	2013
URI	http://essuir.sumdu.edu.ua/handle/123456789/30974
Publisher	Сумський державний університет
License	Copyright not evaluated
Citation	L.P. Purohit, H. Gupta, Pankaj K. Pal, et al., J. Nano- Electron. Phys. 5 No 1, 01020 (2013)
Abstract	S-doped amorphous hydrogenated silicon (a-Si,S:H) thin films were prepared by conventional PECVD method on corning glass substrates. The prepared thin films were subsequently annealed in vacuum (~ 2 × 10 – 6 Torr) in the temperature range from 100 °C to 500 °C. The annealing effects at room temperature were examined by means of optical transmission spectra of the films in the wavelength range 300-1100 nm. Dispersion in optical constants such as transmittance, bandgap and refractive index were observed. Tailoring in optical constants was observed with respect to doping concentrations as well as the annealing temperatures. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/30974
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)