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Title Optical Dispersion In Annealed Thin Films of S-doped a-Si:H Alloys
Authors Purohit, L.P.
Gupta, H.
Pal, Pankaj K.
Kumar, A.
Kumar, R.
Mehra, R.M.
Keywords a-Si:H thin films
Doping concentrations
Annealing temperatures
Transmittance
Optical constants
Type Article
Date of Issue 2013
URI http://essuir.sumdu.edu.ua/handle/123456789/30974
Publisher Сумський державний університет
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Citation L.P. Purohit, H. Gupta, Pankaj K. Pal, et al., J. Nano- Electron. Phys. 5 No 1, 01020 (2013)
Abstract S-doped amorphous hydrogenated silicon (a-Si,S:H) thin films were prepared by conventional PECVD method on corning glass substrates. The prepared thin films were subsequently annealed in vacuum (~ 2 × 10 – 6 Torr) in the temperature range from 100 °C to 500 °C. The annealing effects at room temperature were examined by means of optical transmission spectra of the films in the wavelength range 300-1100 nm. Dispersion in optical constants such as transmittance, bandgap and refractive index were observed. Tailoring in optical constants was observed with respect to doping concentrations as well as the annealing temperatures. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/30974
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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