|Title||Optical Dispersion In Annealed Thin Films of S-doped a-Si:H Alloys|
Pal, Pankaj K.
a-Si:H thin films
|Date of Issue||2013|
|Publisher||Сумський державний університет|
|Citation||L.P. Purohit, H. Gupta, Pankaj K. Pal, et al., J. Nano- Electron. Phys. 5 No 1, 01020 (2013)|
S-doped amorphous hydrogenated silicon (a-Si,S:H) thin films were prepared by conventional PECVD method on corning glass substrates. The prepared thin films were subsequently annealed in vacuum (~ 2 × 10 – 6 Torr) in the temperature range from 100 °C to 500 °C. The annealing effects at room temperature were examined by means of optical transmission spectra of the films in the wavelength range 300-1100 nm. Dispersion in optical constants such as transmittance, bandgap and refractive index were observed. Tailoring in optical constants was observed with respect to doping concentrations as well as the annealing temperatures.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/30974
|Appears in Collections:||
Журнал нано- та електронної фізики (Journal of nano- and electronic physics)
|Purohit L.P._Doping concentrations.pdf||371,28 kB||Adobe PDF||45913|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.