Phase Transition Sensitive Schottky Barriers In Ga-Si(P) Contacts

Abstract

Investigation and understanding of Schottky diodes continue to be interesting both for basic as well as technological points of view. Even now the evolutionary aspects of such contacts are not very clearly understood. In this paper it is shown that in respect of interfacial strain contribution to the barrier heights of such contacts semiconductor – liquid metal contacts are relatively better placed than solid semiconductor-solid metal contacts. Results on Ga-Si(p) contact are discussed in this paper to show phase sensitive contribution to the barrier height of such Schottky contacts. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/30999