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Title Diode Based on Amorphous SiC
Authors Zakhvalinskii, V.S.
Borisenko, L.V.
Aleynikov, A.J.
Piljuk, E.A.
Goncharov, I.
Taran, S.V.
Keywords Atomic force microscopy
Transmission electron microscope
Silicon carbide
Thin films
Type Article
Date of Issue 2013
URI http://essuir.sumdu.edu.ua/handle/123456789/33656
Publisher Сумський державний університет
Citation V.S. Zakhvalinskii, L.V. Borisenko, A.J. Aleynikov, et al., J. Nano- Electron. Phys. 5 No 4, 04029 (2013)
Abstract Diode structure on the basis of amorphous silicon carbide and p-type polycrystalline silicon (Eurosolar) were obtained with magnetron RF-nonreactive sputtering method from solid-phase target in argon atmosphere. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/33656
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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