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Title Features of Ion-Electronic Emission from Surface of Semiconductors
Authors Kurochka, A.
Sergienko, A.
Kurochka, S.
Kolybelkin, V.
Emelyanov, S.G.
Yakushko, E.V.
Chervjakov, L.M.
ORCID
Keywords Ion-electronic emission
Ion-beam etching
Secondary electron current
Autoelectronic emission
Electron affinity
Space charge region
Type Article
Date of Issue 2013
URI http://essuir.sumdu.edu.ua/handle/123456789/33663
Publisher Сумський державний університет
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Citation A. Kurochka, A. Sergienko, S. Kurochka, et al., J. Nano- Electron. Phys. 5 No 4, 04036 (2013)
Abstract The results of the research value of the current of the secondary electrons in the ion-beam etching of various semiconductors. Shows the setup and electrical circuit of the experiment. An experimental study to determine the dependence of the current of the secondary electrons from the band gap Eg and the height of the potential barrier (electron affinity) eχ. It is shown that in the conditions of ion-beam etching of the semiconductor is the penetration of the electric field, which leads to a shift of the energy levels of electrons in the surface layer. Found that the ion-electronic signal emission silicon n-type is higher than the p-type silicon. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/33663
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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