Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/33847
Title: Photoluminescence of high optical quality CdSe thin films deposited by close-spaced vacuum sublimation
Authors: Hnatenko, Yurii Pavlovych 
Bukivskyi, Petro Mykolaiovych
Faryna, Ivan Oleksandrovych
Opanasiuk, Anatolii Serhiiovych 
Ivashchenko, Maksym Mykolaiovych
Keywords: II–VI films
Low-temperature photoluminescence
Residual impurity states
Point defects
Optical quality
Issue Year: 2013
Publisher: ElsevierB.V.
Series/Report no.: 146;
Abstract: Polycrystalline CdSe thin films (d¼0.1–3.0 μm) have been deposited on a glass substrate by means of the close-spaced vacuum sublimation technique. X-ray diffraction measurements have shown that the films obtained at Тs4473 K have only wurtzite phase. The influence of deposition conditions, in particular, the substrate temperature on the photoluminescence (PL) of CdSe films spectra was investigated. This let us study the effect of glass substrate on their optical quality as well as determine the nature and energy structure of the intrinsic defects and residual impurities in the films. The presence in PL spectrum of the most intense sharp donor bound exciton D0 X-line for CdSe films obtained at Ts¼873 K indicates the n-type conductivity and their high optical quality. Intensive PL bands in the spectral range 1.65–1.74 eV were also observed, which are associated with the recombination of donor–acceptor pairs with the participation of the shallow donor and acceptor centers caused by Na(Li) residual impurities. As a result of the study of the PL spectra of CdSe films the optimal temperature conditions of their growth were determined, namely, the substrate temperature T 873 K and the evaporator temperature T 973 K. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/33847
URI: http://essuir.sumdu.edu.ua/handle/123456789/33847
Type: Article
Appears in Collections:Наукові видання (ЕлІТ)

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