Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/34984
Or use following links to share this resource in social networks: Recommend this item
Title Two-stage of Nanocones Formation by Laser Radiation on the Surface of Semiconductors
Authors Medvid, A.
Onufrijevs, P.
Mozolevskis, G.
Dauksta, E.
ORCID
Keywords Laser radiation
p-n junction
Nanocones
Thermogradient effect
Type Conference Papers
Date of Issue 2012
URI http://essuir.sumdu.edu.ua/handle/123456789/34984
Publisher Sumy State University
License
Citation Two-stage of Nanocones Formation by Laser Radiation on the Surface of Semiconductors [Текст] / A. Medvid, P. Onufrijevs, G. Mozolevskis, E. Dauksta // Nanomaterials: Applications & Properties (NAP-2012) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2012. - V.1, No1. - 01PCN44
Abstract In this work we study mechanism of nanocones formation on a surface of elementary semiconductors by Nd:YAG laser radiation. A new mechanism of p-n junction formation by laser radiation in the elementary semiconductor as a first stage of nanocones formation is proposed. We explain this effect in following way: p-n junction is formed by generation and redistribution of intrinsic point defects in temperature gradient field – the Thermogradient effect, which is caused by strongly absorbed laser radiation. According to the Thermogradient effect, interstitial atoms drift towards the irradiated surface, but vacancies drift to the opposite direction – in the bulk of semiconductor. Since interstitials in Ge crystal are of n-type and vacancies are known to be of p-type, a n-p junction is formed. The mechanism is confirmed by appearance of diode-like current-voltage characteristics after i-Ge irradiation crystal by laser radiation. The second stage of nanocones formation is laser heating up of top layer enriched by interstitial atoms with its further plastic deformation due to compressive stress caused by concentration of interstitials in the top layer and vacancies in the buried layer. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/34984
Appears in Collections: Наукові видання (ЕлІТ)

Views

France France
1
Germany Germany
19079
Greece Greece
1
Ireland Ireland
5567
Italy Italy
1
Lithuania Lithuania
1
Netherlands Netherlands
1
Russia Russia
7
Singapore Singapore
423988
Sweden Sweden
1
Ukraine Ukraine
74718
United Kingdom United Kingdom
38154
United States United States
286368
Unknown Country Unknown Country
87

Downloads

China China
148749
France France
1
Germany Germany
2
Indonesia Indonesia
1
Ireland Ireland
1
Ukraine Ukraine
148749
United Kingdom United Kingdom
1
United States United States
286369
Unknown Country Unknown Country
43

Files

File Size Format Downloads
princon_2012_1_1_46.pdf 280.3 kB Adobe PDF 583916

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.