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Title Nanostructured Films of Semiconducting Molybdenum Disulfide Obtained Through Exfoliation-Restacking Method
Authors Golub, A.S.
Lenenko, N.D.
Krinichnaya, E.P.
Ivanova, O.P.
Klimenko, I.V.
Zhuravleva, T.S.
ORCID
Keywords Molybdenum Disulfide
Exfoliation
Thin Films
Surface Structure
Photoconductivity
Type Conference Papers
Date of Issue 2013
URI http://essuir.sumdu.edu.ua/handle/123456789/35055
Publisher Sumy State University
License
Citation Nanostructured Films of Semiconducting Molybdenum Disulfide Obtained Through Exfoliation-Restacking Method [Текст] / A.S. Golub, N.D. Lenenko, E.P. Krinichnaya et al. // Nanomaterials: Applications & Properties (NAP-2013) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2013. - V.2, No1. - 01NTF02
Abstract Preparing MoS2 films in mild conditions, using deposition of suspended MoS2 nanoplatelets onto the substrate is described. For this purpose, the nanosized MoS2 particles were obtained via restacking of MoS2 single layers produced by chemical exfoliation of bulk MoS2 crystals in liquid media. X-Ray diffraction study of the films showed that the basal planes of MoS2 crystallites are mainly oriented in the plane paral-lel to the substrate. Atomic force microscopy examination revealed the dependence of the film surface to-pography, as well as the roughness characteristics on the film thickness, which varied in the range of 0.03-2.2 m. Optical absorption spectra of the obtained MoS2 films were found to contain the same absorption bands as the spectra of thin natural MoS2 single crystals. Dark conductivity of the films was determined to be ~ 10–3 S∙сm–1 at 300 K. The present MoS2 films were found to be photosensitive in the range of 300-800 nm, providing the maximum value of photocurrent under photoexcitation at ~ 440 nm. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35055
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China China
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