Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/35066
Or use following links to share this resource in social networks: Recommend this item
Title Ge/GaAs(100) Thin Films: Large Effect of Film Growth Rate and Thicknesses on Surface Morphology, Intrinsic Stresses and Electrical Properties
Authors Mitin, V.F.
Lytvyn, P.M.
Kholevchuk, V.V.
Matveeva, L.A.
Mitin, V.V.
Kulyk, O.S.
Venger, E.F.
Keywords Ge/GaAs
Electrical properties
Intrinsic stresses
Surface morphology
Type Conference Papers
Date of Issue 2012
URI http://essuir.sumdu.edu.ua/handle/123456789/35066
Publisher Sumy State University
License
Citation Ge/GaAs(100) Thin Films: Large Effect of Film Growth Rate and Thicknesses on Surface Morphology, Intrinsic Stresses and Electrical Properties / V. F. Mitin, P. M. Lytvyn, V. V. Kholevchuk et al. // Nanomaterials: Applications & Properties (NAP-2012) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2012. - V.1, No3. - 03TF17
Abstract We found out and studied a profound effect of film growth rate on the electrical properties, intrinsic stresses and surface morphology of thin Ge films grown on GaAs(100). This effect is essential and has to be accounted for when developing and producing devices based on the Ge/GaAs heterostructure. All the Ge films under investigation were single-crystalline and epitaxially-grown on the GaAs(100) substrates. However, the transport phenomena in Ge films grown at low and high deposition rate differed drastically. Those obtained at low deposition rate were p-type and high resistant. They had a low concentration of free charge carriers and thermally activated conductivity, which is characteristic of heavily doped and strongly (in the limiting case, fully) compensated semiconductors. Although such films were single-crystalline, their conductivity was percolation-type. The Ge films obtained at high deposition rate were n-type and low resistant. They had high concentration of free charge carriers. The temperature dependence of conductivity in such films was weak or practically absent, which is characteristic of degenerate heavily doped semiconductors. Besides, the surface morphology cardinally differed for films obtained at low and high deposition rate. At low film growth rates, surfaces with developed relief were observed whose valleys and ridges formed grains of irregular shape with pronounced substructure. As the film thickness grew, the surface relief became essentially pronounced. At rather high film deposition rates, contrary to the above, the Ge film surface was fine-grained and smooth; the surface relief practically did not depend on the film thickness. As the deposition rate went down, the intrinsic stresses in films essentially decreased. The results obtained were analyzed from the viewpoint of formation of compositional and morphological inhomogeneities, and fluctuations of electrostatic potential at low growth rates. Such potential fluctuations modulate Ge energy bands leading to appearance of potential relief and deep tails of density of states in the Ge bandgap. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35066
Appears in Collections: Наукові видання (ЕлІТ)

Views

Canada Canada
1
China China
3
France France
1
Germany Germany
7
Greece Greece
1
Lithuania Lithuania
1
Netherlands Netherlands
2
Pakistan Pakistan
1
Russia Russia
12
Turkey Turkey
8
Ukraine Ukraine
901
United Kingdom United Kingdom
3129
United States United States
2090
Unknown Country Unknown Country
100
Vietnam Vietnam
6259

Downloads

China China
26
Germany Germany
2
Lithuania Lithuania
1
Ukraine Ukraine
753
United Kingdom United Kingdom
1
United States United States
2089
Unknown Country Unknown Country
37
Vietnam Vietnam
1

Files

File Size Format Downloads
princon_2012_1_3_19.pdf 296,06 kB Adobe PDF 2910

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.