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Title | Oxygen Behavior Around Heavily Doped Ultra-Shallow Junction in Si |
Authors |
Oberemok, O.S.
Gudymenko, O.Yo. Lytovchenko, V.G. Melnyuk, V.P. |
ORCID | |
Keywords |
ion implantation interface arsenic junction diffusion gettering oxygen |
Type | Conference Papers |
Date of Issue | 2012 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/35166 |
Publisher | Sumy State University |
License | |
Citation | Oxygen Behavior Around Heavily Doped Ultra-Shallow Junction in Si / O. S. Oberemok, O. Y. Gudymenko, V. G. Lytovchenko, V. P. Melnyuk // Nanomaterials: Applications & Properties (NAP-2012) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2012. - V. 1, No3. - 03PCSI13 |
Abstract |
The diffusion and gettering of oxygen are investigated after low-energy arsenic implantation and furnace
annealing of SiO2/Si structures. Secondary ion mass spectrometry was used for examination of arsenic
and oxygen depth profiles. It is shown that arsenic-doped ultra-shallow junction in Si stimulates the
background oxygen gettering by SiO2/Si interface at the annealing temperatures higher than 850 C.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35166 |
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