|Title||The Comparative Investigations of Structural and Optical Properties of GaSb nanocrystals / Si layers|
Broad band emission
|Date of Issue||2013|
|Publisher||Sumy State University|
|Citation||The Comparative Investigations of Structural and Optical Properties of GaSb nanocrystals / Si layers [Текст] / M.V. Greben, F.F. Komarov, L.A. Vlasukova et al. // Nanomaterials: Applications & Properties (NAP-2013) : 3-rd International conference, Alushta, the Crimea, Ukraine, September 16-21, 2013 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2013. - V.2, No2. - 02PCN16|
Optical and structural properties of GaSb nanocrystals fabricated by co-implantation of Ga and Sb ions
in single crystalline Si (100), followed by thermal treatment are investigated. In the first group of samples
named Si / GaSb the implantation of Ga ions was followed by Sb implantation, whereas in the second
group of samples named Si / SbGa with increased by factor 1.4 ion fluence the order of implantation was
inverted. The presence of nanocrystals in both kinds of samples was proved by TEM and RS experiments.
Low-temperature PL measurements show a PL broad band in the region at 0.75-1.1 eV for Si / SbGa samples
annealed at 900 °C. No PL was observed in the Si/SbGa samples after annealing at 1100 °C.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35169
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