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Title The Comparative Investigations of Structural and Optical Properties of GaSb nanocrystals / Si layers
Authors Greben, M.V.
Komarov, F.F.
L.A. Vlasukova1,
Milchanin, O.V.
Mudryi, A.V.
Parkhomenko, I.N.
Keywords Crystalline silicon
GaSb nanocrystals
High-fluence implantation
Broad band emission
Type Conference Papers
Date of Issue 2013
URI http://essuir.sumdu.edu.ua/handle/123456789/35169
Publisher Sumy State University
License
Citation The Comparative Investigations of Structural and Optical Properties of GaSb nanocrystals / Si layers [Текст] / M.V. Greben, F.F. Komarov, L.A. Vlasukova et al. // Nanomaterials: Applications & Properties (NAP-2013) : 3-rd International conference, Alushta, the Crimea, Ukraine, September 16-21, 2013 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2013. - V.2, No2. - 02PCN16
Abstract Optical and structural properties of GaSb nanocrystals fabricated by co-implantation of Ga and Sb ions in single crystalline Si (100), followed by thermal treatment are investigated. In the first group of samples named Si / GaSb the implantation of Ga ions was followed by Sb implantation, whereas in the second group of samples named Si / SbGa with increased by factor 1.4 ion fluence the order of implantation was inverted. The presence of nanocrystals in both kinds of samples was proved by TEM and RS experiments. Low-temperature PL measurements show a PL broad band in the region at 0.75-1.1 eV for Si / SbGa samples annealed at 900 °C. No PL was observed in the Si/SbGa samples after annealing at 1100 °C. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35169
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