Mechanism of Oxygen Redistribution During Ultra-shallow Junction Formation in Silicon

Oberemok, O.S.; Gamov, D.V.; Litovchenko, V.G.; Romanyuk, B.M.; Melnik, V.P.; Klad’ko, V.P.; Popov, V.G.; Gudymenko, O.Yo.

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Title	Mechanism of Oxygen Redistribution During Ultra-shallow Junction Formation in Silicon
Authors	Oberemok, O.S. Gamov, D.V. Litovchenko, V.G. Romanyuk, B.M. Melnik, V.P. Klad’ko, V.P. Popov, V.G. Gudymenko, O.Yo.
ORCID
Keywords	Ion implantation Interface Arsenic Oxygen Junction Diffusion Gettering SiO2 SIMS XDS
Type	Conference Papers
Date of Issue	2013
URI	http://essuir.sumdu.edu.ua/handle/123456789/35276
Publisher	Sumy State University
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Citation	Mechanism of Oxygen Redistribution During Ultra-shallow Junction Formation in Silicon [Текст] / O.S. Oberemok, D.V. Gamov, V.G. Litovchenko et al. // Nanomaterials: Applications & Properties (NAP-2013) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2013. - V.2, No1. - 01PCSI14
Abstract	The transport of dissolved oxygen in the Czochralski silicon towards the arsenic-doped ultra-shallow junction was investigated. Ultra-shallow junction was formed by low-energy As+ ion implantation with the subsequent furnace annealing at 750 C-950 C temperatures for the dopant activation. Oxygen and arse-nic redistributions were investigated by secondary ion mass spectrometry (SIMS) technique. The peculiari-ties of defect creation and transformation were studied by the X-ray diffuse scattering technique (XDS). It was found that oxygen concentration in the arsenic redistribution region is increased a few times already after 1 minute of annealing. Increase of annealing time leads to decrease of oxygen accumulation as a re-sult of oxygen transportation to the SiO2/Si interface. As a result the thickness of screen silicon oxide is in-creased by 0.5 nm. This effect is related with the oxygen gettering from the wafer bulk. A physical mecha-nism of the oxygen transfer is discussed. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35276
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