The Effect of γ-irradiation on the Structural and Physical Properties of CdSe Thin Films

Abstract

Thin film of CdSe has been deposited on to clean glass substrate by using CBD technique at room temperature. The samples are irradiated by γ-ray with various doses (25,50,100,150) rad. These films are characterized by XRD, which indicated that as-deposited CdSe layers and irradiated films at 25 & 50 rad of γ- ray grew in cubic phase having preferred orientation along (111) plane in c-direction. Further the irradiated films at 100 & 150 rad of γ- ray show polycrystalline in nature and with a mixture of cubic along with hexagonal structures. Optical absorption spectra of these thin films have been recorded using spectrophotometer. The energy band gap has been determined using these spectra. It is found that energy band gap of CdSe film is 2.09 eV and it is increased as increasing γ- ray irradiation does. The electrical conductivity measurements gave a decrease in conductivity with the increase of γ- irradiation does. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35312