Ferromagnetism and Electronic Structure of (Ga,Mn)As:Bi and (Ga,Mn)As Epitaxial Layers

Yastrubchak, O.; Sadowski, J.; Andrearczyk, T.; Domagała, J. Z.; Gluba, Ł.; Rawski, M.; Żuk, J.; Wosinski, T.

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Title	Ferromagnetism and Electronic Structure of (Ga,Mn)As:Bi and (Ga,Mn)As Epitaxial Layers
Authors	Yastrubchak, O. Sadowski, J. Andrearczyk, T. Domagała, J. Z. Gluba, Ł. Rawski, M. Żuk, J. Wosinski, T.
ORCID
Keywords	(Ga,Mn)As:Bi (Ga,Mn)As Diluted ferromagnetic semiconductor Photoreflectance (PR) spec-troscopy Fermi level Band-structure
Type	Conference Papers
Date of Issue	2013
URI	http://essuir.sumdu.edu.ua/handle/123456789/35332
Publisher	Sumy State University
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Citation	Ferromagnetism and Electronic Structure of (Ga,Mn)As:Bi and (Ga,Mn)As Epitaxial Layers [Текст] / O. Yastrubchak, J. Sadowski, T. Andrearczyk et al. // Nanomaterials: Applications & Properties (NAP-2013) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2013. - V.2, No1. - 01NFPMM01
Abstract	The photoreflectance (PR) spectroscopy was applied to study the band-structure in GaAs:Bi, (Ga,Mn)As and (Ga,Mn)As:Bi layers with the 4% of Mn and 1 % of Bi content and, as a reference, undoped GaAs layer. All films were grown by low temperature (LT) MBE on semi-insulating (001) GaAs substrates. Photoreflec-tance studies were supported by Raman spectroscopy and high resolution X-ray diffractometry (XRD) measurements. Magnetic properties of the films were characterized with a superconducting quantum in-terference device (SQUID) magnetometer. Our findings were interpreted in terms of the model, which as-sumes that the mobile holes residing in the valence band of GaAs and the Fermi level position determined by the concentration of valence-band holes. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35332
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