Mechanically Stacked Triple-junction GaInP / GaAs / Si Solar Cell Simulation

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Title	Mechanically Stacked Triple-junction GaInP / GaAs / Si Solar Cell Simulation
Authors	Gnilenko, A.B. Plaksin, S.V.
ORCID
Keywords	Solar cell Triple-junction Mechanically stacked GaInP / GaAs / Si Silvaco TCAD
Type	Article
Date of Issue	2013
URI	http://essuir.sumdu.edu.ua/handle/123456789/35548
Publisher	Sumy State University
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Citation	Gnilenko, A. B. Mechanically Stacked Triple-junction GaInP / GaAs / Si Solar Cell Simulation [Текст] / A. B. Gnilenko, S. V. Plaksin // Журнал нано- та електронної фізики. - 2013. - Т.5, №4, Ч.ІІ. - 04057.
Abstract	Mechanically stacked triple-junction GaInP / GaAs / Si solar cell is simulated by Silvaco TCAD computer software and compared to more conventional GaInP / GaAs / Ge mechanically stacked configuration. External quantum efficiency, I-V characteristics and basic I-V parameters are obtained to demonstrate the advantages of using the silicon active substrate as the bottom sub-cell instead of the germanium substrate based bottom sub-cell. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35548
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)