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Title Comparison of Atomic Level Simulation Studies of MOSFETs Containing Silica and Lantana Nanooxide Layers
Authors Bikshalu, K.
Manasa, M.V.
Reddy, V.S.K.
Reddy, P.C.S.
Venkateswara Rao, K.
Keywords MOSFET
Nano oxide layer
Quantum mechanical tunneling
Transmission spectra
I-V characteristics
Channel conductance
Type Article
Date of Issue 2013
URI http://essuir.sumdu.edu.ua/handle/123456789/35551
Publisher Sumy State University
License
Citation Comparison of Atomic Level Simulation Studies of MOSFETs Containing Silica and Lantana Nanooxide Layers [Текст] / K. Bikshalu, M. V. Manasa, V. S. Reddy et al. // Журнал нано- та електронної фізики. - 2013. - Т.5, №4, Ч.ІІ. - 04058.
Abstract The intense downscaling of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) to nano range for improving the device performance requires a high-k dielectric material instead of conventional silica (SiO2) as to avoid Quantum Mechanical Tunneling towards the gate terminal which leads to unnecessary gate current. Out of all the rare earth oxide materials, since lanthana (La2O3) has significantly high dielectric constant (k) and bandgap, we’ve chosen it as oxide layer for one of the MOSFETs. In this work, we simulated two MOSFETs – one with nano SiO2 oxide layer and other with nano La2O3 oxide layer in the atomic level to analyze and compare the transmission spectra, I-V characteristics and Channel conductance of both the MOSFETs. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35551
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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