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Title Investigation of CNTFET Performance with Gate Control Coefficient Effect
Authors Khan, S.A.
Hasan, M.
Mominuzzaman, S.M.
ORCID
Keywords Gate Control Coefficient
CNTFET
Drain сurrent
Transconductance
Type Article
Date of Issue 2014
URI http://essuir.sumdu.edu.ua/handle/123456789/35983
Publisher Sumy State University
License
Citation S.A. Khan, M. Hasan, S.M. Mominuzzaman, J. Nano- Electron. Phys. 6 No 2, 02008 (2014)
Abstract For the first time, a deep study of gate control coefficient (αG) effect on CNTFET performance has done in this research. A new, analytical CNTFET simulation along with multiple parameter approach has executed with 3D output in MATLAB and that used it to examine device performance. It is found that, drain current and transconductance increases with high gate control coefficient. On the other hand, total capacitance decreases with high αG value resulting improved charging energy. Likewise, drain induced barrier lowering (DIBL) decreases with αG that provides less deviation from ideal device performance. Finally, subthreshold swing comes very close to the theoretical limit at high αG which is desired for low threshold voltage and low-power operation for FETs scaled down to small sizes. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35983
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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