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Title | Control of the Parameters of GaAs:Si p-n Structures by Gyrotron Irradiation |
Authors |
Sukach, G.A.
Kidalov, V.V. |
ORCID | |
Keywords |
gyrotron irradiation гіротрон опромінення гиротрон облучения light-emitting structures світловипромінювальні структури светоизлучающие структуры thermoelastic stresses термопружна напруга термоупругое напряжение |
Type | Article |
Date of Issue | 2011 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/36013 |
Publisher | Sumy State University |
License | |
Citation | Sukach, G.A. Control of the Parameters of GaAs:Si p-n Structures by Gyrotron Irradiation [Текст] / G.A. Sukach, V.V. Kidalov // Journal of Nano- and Electronic Physics. — 2011. — Vol.3, №4. — P. 99-108. |
Abstract |
It is shown that using gyrotron irradiation it is possible to control the p-n junction in an already fabricated light-emitting structure. Shift of the compensated region of emitting structure based on GaAs:Si is conditioned by the motion of impurities in the
field of thermoelastic stresses appearing during cooling of the samples after gyrotron irradiation.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/36013 |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
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File | Size | Format | Downloads |
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Sukach Control of the parameters.pdf | 159,88 kB | Adobe PDF | -599243331 |
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