|Title||Impurity Influence on Nitride LEDs|
Light emitting diode
|Date of Issue||2014|
|Publisher||Sumy State University|
|Citation||O.I. Rabinovich, S.A. Legotin, S.I. Didenko, J. Nano- Electron. Phys. 6 No 3, 03002 (2014)|
Light emitting diodes (LEDs) are widely used nowadays. They are used in major parts of our life. But it
is still necessary to improve their characteristics. In this paper the impurity and Indium atoms influence
on the LEDs characteristics is investigated by computer simulation. Simulation was carried out in Sim
Windows. The program was improved for this purpose by creating new files for AlGaInN heterostructure
and devices including more than 25 basic parameters. It was found that characteristics depend on impurity
and indium atoms changes a lot. The optimum impurity concentration for doping barriers between quan-tum wells was achieved. By varying impurity and Indium concentration the distribution in AlGaInN het-erostructure LEDs characteristics could be improved.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/36102
|Appears in Collections:||
Журнал нано- та електронної фізики (Journal of nano- and electronic physics)
|Impurity Influence on Nitride LEDs.pdf||166,57 kB||Adobe PDF||906868|
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