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Title Simulation of tunnel junction in cascade solar cell (GaAs/Ge) using AMPS-1D
Authors Dennai, B.
Slimane, H.B.
Helmaoui, A.
Keywords AMPS-1D
Multi-junction
GaAs
Tunnel junction
Type Article
Date of Issue 2014
URI http://essuir.sumdu.edu.ua/handle/123456789/38414
Publisher Sumy State University
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Citation Benmoussa Dennai, H. Ben Slimane, A. Helmaoui, J. Nano- Electron. Phys. 6 No 04001, 4 (2014)
Abstract The development of the tunnel junction interconnect was key the first two-terminal monolithic, multijunction solar cell development. This paper describes simulation for the tunnel junction (GaAs) between top cell (GaAs) and bottom cell (Ge). This solar cell cascade was simulated when using one dimensional simulation program called analysis of microelectronic and photonic structures (AMPS-1D). In the simulation, the thickness of the tunnel junction layer was varied from 10 to 50 nm. By varying thickness of tunnel junction layer the simulated device performance was demonstrate in the form of current-voltage(I-V) characteristics and quantum efficiency (QE).
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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