|Title||Simulation of tunnel junction in cascade solar cell (GaAs/Ge) using AMPS-1D|
|Date of Issue||2014|
|Publisher||Sumy State University|
|Citation||Benmoussa Dennai, H. Ben Slimane, A. Helmaoui, J. Nano- Electron. Phys. 6 No 04001, 4 (2014)|
The development of the tunnel junction interconnect was key the first two-terminal monolithic, multijunction
solar cell development. This paper describes simulation for the tunnel junction (GaAs) between
top cell (GaAs) and bottom cell (Ge). This solar cell cascade was simulated when using one dimensional
simulation program called analysis of microelectronic and photonic structures (AMPS-1D). In the simulation,
the thickness of the tunnel junction layer was varied from 10 to 50 nm. By varying thickness of tunnel
junction layer the simulated device performance was demonstrate in the form of current-voltage(I-V) characteristics
and quantum efficiency (QE).
|Appears in Collections:||
Журнал нано- та електронної фізики (Journal of nano- and electronic physics)
|Dennai_Slimane_ Helmaoui.pdf||281,58 kB||Adobe PDF||290|
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