Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/38414
Title: Simulation of tunnel junction in cascade solar cell (GaAs/Ge) using AMPS-1D
Authors: Dennai, B.
Slimane, H.B.
Helmaoui, A.
Keywords: AMPS-1D
Multi-junction
GaAs
Tunnel junction
Issue Year: 2014
Publisher: Sumy State University
Citation: Benmoussa Dennai, H. Ben Slimane, A. Helmaoui, J. Nano- Electron. Phys. 6 No 04001, 4 (2014)
Abstract: The development of the tunnel junction interconnect was key the first two-terminal monolithic, multijunction solar cell development. This paper describes simulation for the tunnel junction (GaAs) between top cell (GaAs) and bottom cell (Ge). This solar cell cascade was simulated when using one dimensional simulation program called analysis of microelectronic and photonic structures (AMPS-1D). In the simulation, the thickness of the tunnel junction layer was varied from 10 to 50 nm. By varying thickness of tunnel junction layer the simulated device performance was demonstrate in the form of current-voltage(I-V) characteristics and quantum efficiency (QE).
URI: http://essuir.sumdu.edu.ua/handle/123456789/38414
Type: Article
Appears in Collections:Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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