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Title | Sensing properties of gas sensor based on adsorption of NO2 with defect, pristine, Fe and Si-MoS2 layer |
Authors |
Shakil, S.R.
Khan, S.A. |
ORCID | |
Keywords |
DOS Electrostatic difference potential 2D MoS2 |
Type | Article |
Date of Issue | 2014 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/38417 |
Publisher | Sumy State University |
License | |
Citation | S.R. Shakil, S.A. Khan, J. Nano- Electron. Phys. 6 No 04004, 4 (2014) |
Abstract |
Two-dimensional (2D) layered materials are currently being considered as entrant for future electronic
devices. Molybdenum disulphide (MoS2) belongs to a family of layered transitional metal dichalcogenides(TMDS),has
a unique characteristics of showing intrinsic semiconducting nature is being considered a
major advantageous over graphene (which has no intrinsic band gap) as a two-dimensional (2D) channel
material in field effect transistors(FET). In the paper, the results of investigations are presented concerning
the affects of adsorption of NO2 gas on the surface of MoS2, defect-MoS2, Si-MoS2 and Fe-MoS2 layer.
The changes density of states (DOS) and electrostatic difference potential of Si-MoS2 by applying different
gate voltage were studied. We proposed that, NO2 might play an important role on MoS2 layer that can be
used as gas sensor. In the research, it has been shown that in the case of gas sensor, the adsorption of NO2
with MoS2, Fe-MoS2, Si-MoS2 and defect-MoS2 play an important rule for sensing behavior. |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
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